2SK3027 fet equivalent, silicon n-channel power f-mos fet.
q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage
unit.
+0.5
1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4 1 2 3
2.6±0.1 0.7±0.1
s Absolute Maximum Ratings (TC = 25°C)
Para.
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